| 000 | 01146cam a2200277u 4500 | ||
|---|---|---|---|
| 001 | rea00042153 | ||
| 005 | 20190704083603.0 | ||
| 007 | ta||| | ||
| 008 | 110314|2009| |||||||e||||||||||||eng|u | ||
| 010 | _a 2009021528 | ||
| 020 | _a9781848211636 | ||
| 035 | _zNO CTRL | ||
| 039 |
_a41759 _cTLC |
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| 245 | 0 | 0 |
_aPhysics and operation of silicon devices in integrated circuits _cedited by Jacques Gautier |
| 260 | 0 |
_aHoboken, NJ _bWiley _c2009 |
|
| 300 |
_axxi, 373p. _bill _c23cm |
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| 500 | _aIncludes bibliographical references and index | ||
| 505 | _aPhysical basis of semiconductor materials -- Transport in semiconductor devices -- Mosfet device physics and operation -- Soi technology and transistors -- Bipolar junction transistors, physics, and technology -- Non-volatile memories | ||
| 650 | 4 | _aMetal oxide semiconductors. | |
| 700 |
_aGautier, Jacques, _d1948- _eed. |
||
| 949 |
_aBMAIN _cQC611.8 _d.M4 P4713 2009 c.1 _g76167 _5N |
||
| 949 |
_aBMAIN _cQC611.8 _d.M4 P4713 2009 c.2 _g76168 _5N |
||
| 961 | _t1 | ||
| 999 |
_c37888 _d37888 |
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